2011. 6. 21 1/7 semiconductor technical data kf4n65p/f n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features h v dss =650v, i d =3.6a h drain-source on resistance : r ds(on) (max)=2.5 ? @v gs =10v h qg(typ.)= 12nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit kf4n65p kf4n65f drain-source voltage v dss 650 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 3.6 3.6* a @t c =100 ? 2.3 2.3* pulsed (note1) i dp 8.4 8.4* single pulsed avalanche energy (note 2) e as 103 mj repetitive avalanche energy (note 1) e ar 3.1 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 83.3 37.9 w derate above 25 ? 0.67 0.30 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.5 3.3 ? /w thermal resistance, junction-to-ambient r thja 62.5 62.5 ? /w g d s pin connection pppp k pppp k pppp k pppp k pppp k pppp k ppppp k k pppp k pppp k pppp k pppp p k k p p p p p p p-d p p pppp k pppp k pppp k pppp k ppppp k pppp k pppp k pppp k pppp k pppp k pppp k pppp k pppp k pppp k gpppp kf4n65p kf4n65f
2011. 6. 21 2/7 kf4n65p/f revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 650 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.65 - v/ ? drain cut-off current i dss v ds =650v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =1.8a - 2.1 2.5 ? dynamic total gate charge q g v ds =520v, i d =3.6a v gs =10v (note4,5) - 12 - nc gate-source charge q gs - 2.5 - gate-drain charge q gd - 5.0 - turn-on delay time t d(on) v dd =325v i d =3.6a r g =25 ? (note4,5) - 20 - ns turn-on rise time t r - 15 - turn-off delay time t d(off) - 45 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 510 - pf output capacitance c oss - 60 - reverse transfer capacitance c rss - 6.5 - source-drain diode ratings continuous source current i s v gs 2011. 6. 21 3/7 kf4n65p/f revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 reverse drain current i s (a) 6.0 5.0 3.0 2.0 1.0 0 4.0 04 23 18 567 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 1.8a v gs = 0v i ds = 250 100 c 25 c 150 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v, 7v v gs =10v v gs =7v v ds =25v v gs =5v
2011. 6. 21 4/7 kf4n65p/f revision no : 0 gate - charge q g (nc) 0 12 10 6 2 4 8 14 16 6 210 812 4 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 4 10 3 10 2 10 1 10 0 fig10. safe operation area 0 0 3 1 2 4 75 150 125 50 100 25 drain current i d (a) i d =3.6a c junction temperature t j ( ) fig11. i d - t j v ds = 520v drain - source voltage v ds (v) capacitance (pf) drain current i d (a) drain - source voltage v ds (v) 10 1 10 0 10 1 10 -1 10 0 10 -2 10 1 10 -1 10 0 10 -2 10 2 10 3 (kf4n65p) t c = 25 t j = 150 single nonrepetitive pulse c c dc 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) drain current i d (a) drain - source voltage v ds (v) 10 1 10 0 10 2 10 3 (kf4n65f) t c = 25 t j = 150 single nonrepetitive pulse c c dc 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) fig 7. c - v ds 0 10203040 c rss c oss c iss
2011. 6. 21 5/7 kf4n65p/f revision no : 0 fig12. transient thermal response curve transient thermal resistance fig13. transient thermal response curve normalized transient thermal resistance time (sec) (kf4n65p) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 time (sec) (kf4n65f) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0 10 -2 10 -1 10 1 10 0 - duty factor, d= t 1 /t 2 t 1 t 2 p dm duty=0 .5 s ingle pulse 0.05 0.1 0.2 0.02 0.01 - duty factor, d= t 1 /t 2 t 1 t 2 p dm duty=0.5 single p ulse 0. 05 0.1 0.2 0.02 0.01
2011. 6. 21 6/7 kf4n65p/f revision no : 0 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2011. 6. 21 7/7 kf4n65p/f revision no : 0 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss
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